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| BAR14-1 / BAR15-1 / BAR16-1 / BAR61... Silicon PIN Diode RF switch, RF attenuator for frequencies above 10 MHz Low distortion faktor Long-term stability of electrical characteristics BAR14-1 3 BAR15-1 3 BAR16-1 3 BAR61 4 3 D1 D3 D1 D2 D1 D2 D1 D2 D2 1 2 1 2 1 2 1 2 Type BAR14-1 BAR15-1 BAR16-1 BAR61 Package SOT23 SOT23 SOT23 SOT143 Configuration series common cathode common anode PI element LS(nH) 1.8 1.8 1.8 2 Marking L7s L8s L9s 61s Maximum Ratings at TA = 25C, unless otherwise specified Parameter Diode reverse voltage Forward current Total power dissipation Junction temperature Operating temperature range Storage temperature Thermal Resistance Parameter Junction - soldering point1) 1For Symbol VR IF Ptot Tj Top Tstg Symbol RthJS Value 100 140 250 150 -55 ... 125 -55 ... 150 Unit V mA mW C calculation of RthJA please refer to Application Note Thermal Resistance 1 TS 65C Value 340 Unit K/W Dec-20-2002 BAR14-1 / BAR15-1 / BAR16-1 / BAR61... Electrical Characteristics at TA = 25C, unless otherwise specified Parameter DC Characteristics Reverse current VR = 50 V VR = 100 V IR Symbol min. Values typ. max. Unit nA 1.05 100 1000 1.25 V Forward voltage IF = 100 mA VF - AC Characteristics Diode capacitance VR = 0 V, f = 100 MHz VR = 50 V, f = 1 MHz CT pF 0.2 0.25 50 0.5 S VR = 0 V, f = 100 MHz IF = 0.01 mA, f = 100 MHz IF = 0.1 mA, f = 100 MHz IF = 1 mA, f = 100 MHz IF = 10 mA, f = 100 MHz IF = 10 mA, IR = 6 mA, measured at IR = 3 mA, rr 2800 380 45 7 1000 - I-region width RL = 100 2 Charge carrier life time 700 WI - 146 - Dec-20-2002 Forward resistance rf Zero bias conductance gP - ns m BAR14-1 / BAR15-1 / BAR16-1 / BAR61... Diode capacitance CT = f = Parameter BAR 14-1...16-1 f = 100MHz EHD07067 1.0 CT pF 10 4 rf 10 3 BAR 14-1...16-1 0.5 10 2 f = 1 MHz f = 100 MHz 10 1 0.0 0 10 20 30 40 V VR 50 10 0 10 -2 10 -1 10 0 T A = 25C 10 2 BAR 14-1...16-1 BAR14-1, BAR15-1, BAR16-1 EHD07065 160 mA F mA 10 1 TA = -40 C 25 C 85 C 150 C IF 120 100 10 0 80 60 10 -1 40 20 10 -2 0.0 0.5 1.0 V VF 1.5 0 0 15 30 45 60 3 Forward current I F = (V F) Forward current IF = (TS ) 75 (VR) Forward resistance rf = (IF ) EHD07066 10 1 mA 10 2 F 90 105 120 C 150 TS Dec-20-2002 BAR14-1 / BAR15-1 / BAR16-1 / BAR61... Application circuit for attenuation networks with diode BAR61 50 k +12 V 1 nF V Reg. 1 nF BC 238 1 k 1 nF Input 1 nF 12 k 1 nF BAR 61 1 k 1 nF Output 1 nF 1 nF 5.6 k 4.7 k 1.8 k 2.2 k EHM07026 4 Dec-20-2002 |
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